DocumentCode :
1412975
Title :
On the Choice of High- 
Dielectrics for Metal Nanocrystal Memory to Improve Data Retention
Author :
Pavel, Akeed A. ; Islam, Naz
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Missouri, Columbia, MO, USA
Volume :
9
Issue :
3
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
345
Lastpage :
347
Abstract :
An investigation on the optimized choice of high-κ gate dielectrics and metal nanocrystals (NCs) for improving retention capability of a flash memory is presented. The influence of charge neutrality level (CNL) of gate dielectrics on retention time is quantified. Results show that retention efficacy of metal NCs with high work function (WF) is adversely affected when embedded in certain oxides with high CNLs. This unravels that both the CNL and WF must be tuned together to maximize the retention period.
Keywords :
flash memories; high-k dielectric thin films; work function; charge neutrality level; data retention; flash memory; high-?? gate dielectrics; metal nanocrystal memory; work function; Charge neutrality level (CNL); high-$kappa$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2041934
Filename :
5409575
Link To Document :
