• DocumentCode
    1413053
  • Title

    All-active monolithic InP-based HBT VCO with tunable HEMT inductor

  • Author

    Kobayashi, K.W. ; Tran, L.T. ; Lai, R. ; Block, T.R. ; Cowles, J. ; Liu, P.H. ; Oki, A.K. ; Streit, D.C.

  • Author_Institution
    Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • Volume
    33
  • Issue
    16
  • fYear
    1997
  • fDate
    7/31/1997 12:00:00 AM
  • Firstpage
    1379
  • Lastpage
    1380
  • Abstract
    A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The MMIC monolithically integrates an InP common-collector HBT oscillator with a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs such as the multi-vibrator, and has direct implications for high speed clock recovery circuits needed in InP based optoelectronic IC applications
  • Keywords
    indium compounds; InP; MMIC technology; all-active analogue HBT VCO; common-collector HBT oscillator; high speed clock recovery circuit; monolithic integration; optoelectronic IC; selective MBE; tunable HEMT inductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970912
  • Filename
    612162