Title :
All-active monolithic InP-based HBT VCO with tunable HEMT inductor
Author :
Kobayashi, K.W. ; Tran, L.T. ; Lai, R. ; Block, T.R. ; Cowles, J. ; Liu, P.H. ; Oki, A.K. ; Streit, D.C.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
7/31/1997 12:00:00 AM
Abstract :
A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The MMIC monolithically integrates an InP common-collector HBT oscillator with a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs such as the multi-vibrator, and has direct implications for high speed clock recovery circuits needed in InP based optoelectronic IC applications
Keywords :
indium compounds; InP; MMIC technology; all-active analogue HBT VCO; common-collector HBT oscillator; high speed clock recovery circuit; monolithic integration; optoelectronic IC; selective MBE; tunable HEMT inductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970912
