DocumentCode
1413053
Title
All-active monolithic InP-based HBT VCO with tunable HEMT inductor
Author
Kobayashi, K.W. ; Tran, L.T. ; Lai, R. ; Block, T.R. ; Cowles, J. ; Liu, P.H. ; Oki, A.K. ; Streit, D.C.
Author_Institution
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume
33
Issue
16
fYear
1997
fDate
7/31/1997 12:00:00 AM
Firstpage
1379
Lastpage
1380
Abstract
A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The MMIC monolithically integrates an InP common-collector HBT oscillator with a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs such as the multi-vibrator, and has direct implications for high speed clock recovery circuits needed in InP based optoelectronic IC applications
Keywords
indium compounds; InP; MMIC technology; all-active analogue HBT VCO; common-collector HBT oscillator; high speed clock recovery circuit; monolithic integration; optoelectronic IC; selective MBE; tunable HEMT inductor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970912
Filename
612162
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