Title :
Low threshold CW operation of GaInP/AlGaInP DFB lasers at 680 nm
Author :
Gauggel, H.-P. ; Kuhn, J. ; Jerichow, C. ; Geng, C. ; Scholz, F. ; Schweizer, H.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
fDate :
7/31/1997 12:00:00 AM
Abstract :
Continuous wave operation of GaInP/AlGaInP DFB lasers at room temperature is reported. The DFB lasers in ridge waveguide geometry show stable singlemode emission with a sidemode suppression >30 dB and a threshold current of 25.9 mA at 20°C. Singlemode operation could be achieved for a large temperature range between -10 and 40°C. Even for 40°C the threshold current remains below 50 mA
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; laser modes; laser transitions; ridge waveguides; semiconductor lasers; waveguide lasers; -10 to 40 C; 20 C; 25.9 mA; 680 nm; DFB lasers; GaInP-AlGaInP; continuous wave operation; low threshold CW operation; ridge waveguide geometry; room temperature operation; stable singlemode emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970940
