DocumentCode
1413088
Title
Room-temperature pulsed operation of 1.3 μm GaInNAs/GaAs laser diode
Author
Sato, S. ; Osawa, Y. ; Saitoh, T. ; Fujimura, I.
Author_Institution
Gen. Electron. Res. & Dev. Center, Ricoh Co. Ltd., Miyagi, Japan
Volume
33
Issue
16
fYear
1997
fDate
7/31/1997 12:00:00 AM
Firstpage
1386
Lastpage
1387
Abstract
A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 μm at room-temperature under pulsed operation is demonstrated
Keywords
III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; 1.3 micrometre; GaInNAs-GaAs; III-V semiconductors; dimethylhydrazine; double-heterostructure laser diode; metal organic chemical vapour deposition; room-temperature pulsed operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970935
Filename
612168
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