Title :
Single-angled-facet laser diode for widely tunable external cavity semiconductor lasers with high spectral purity
Author :
Heim, P.J.S. ; Fan, Z.F. ; Cho, S.H. ; Nam, Keeyol ; Dagenais, M. ; Johnson, F.G. ; Leavitt, R.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
7/31/1997 12:00:00 AM
Abstract :
External cavity semiconductor lasers are demonstrated using a single-angled-facet semiconductor laser diode that does not require anti-reflection coating. A wide tuning bandwidth (7%, λ=980 nm), large side-mode suppression ratio (50 dB, λ=1590 nm), narrow linewidth (50 kHz), and high output power (13.5 mW) are achieved with conventional external cavity configurations
Keywords :
laser cavity resonators; laser tuning; semiconductor lasers; 13.5 mW; 1590 nm; 50 kHz; 980 nm; linewidth; output power; side-mode suppression ratio; single-angled-facet laser diode; spectral purity; tuning bandwidth; widely tunable external cavity semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970911
