Title :
In Situ Observation of Compliance-Current Overshoot and Its Effect on Resistive Switching
Author :
Wan, H.J. ; Zhou, P. ; Ye, L. ; Lin, Y.Y. ; Tang, T.A. ; Wu, H.M. ; Chi, M.H.
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
fDate :
3/1/2010 12:00:00 AM
Abstract :
The compliance-current dependence of the resistive-switching behaviors is investigated in TaN/CuxO/Cu memory devices with 1R architecture and 1T1R architecture, respectively. The correlation of reset current I reset and on-state resistance R on can be verified by adjusting the compliance current I comp. Meanwhile, I reset and R on become independent on I comp in the 1R architecture when I comp is below 1 mA. A serious compliance-current overshoot phenomenon is in situ observed in 1R-architecture device, and it remarkably affects the resistive-switching characteristics because the compliance current dominates the memory behaviors. Therefore, resistive-switching investigation based on 1T1R architecture is much more reliable.
Keywords :
copper compounds; semiconductor storage; switching circuits; tantalum compounds; 1T1R architecture; TaN-CuxO-Cu; compliance current overshoot; in situ observation; memory device; on-state resistance; parasitic capacitance; reset current; resistive switching; Compliance current; overshoot; parasitic capacitance; resistive switching;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2039694
