Title :
InAs/(Al,Ga)Sb quantum well structures for magnetic sensors
Author :
Behet, M. ; Das, J. ; De Boeck, Jo ; Borghs, G.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1998 12:00:00 AM
Abstract :
This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and good temperature stability, InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 30,000 cm2Ns at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity of 0.46%/mT) and Hall elements (magnetic sensitivity of 5.5 V/T),
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; indium compounds; magnetic field measurement; magnetic sensors; magnetoresistive devices; semiconductor epitaxial layers; semiconductor quantum wells; 293 K; GaAs; Hall sensors; InAs-AlGaSb; electron mobility; magnetoresistive sensors; magnetoresistors; molecular beam epitaxy; quantum well structures; semiinsulating GaAs substrates; Fabrication; Gallium arsenide; Magnetic properties; Magnetic sensors; Magnetoresistance; Molecular beam epitaxial growth; Sensor phenomena and characterization; Stability; Substrates; Temperature sensors;
Journal_Title :
Magnetics, IEEE Transactions on
