• DocumentCode
    1413387
  • Title

    Reliable high power InGaAs/AlGaAs (915 nm) laser diodes

  • Author

    He, Xiangning ; Mitchell, Cathryn ; SRINIVASAN, SUDARSHAN ; Patel, Rahul

  • Author_Institution
    Opto Power Corp., Tucson, AZ
  • Volume
    33
  • Issue
    16
  • fYear
    1997
  • fDate
    7/31/1997 12:00:00 AM
  • Firstpage
    1416
  • Lastpage
    1418
  • Abstract
    Reliable continuous wave (CW) operation of high power InGaAs/AlGaAs (915 nm) laser diodes is reported. 6 W CW output power from uncoated 100 μm wide facets is demonstrated for an AlGaAs-InGaAs (915 nm) broad area laser diode. Internal losses are measured to be as low as 0.72 cm-1. High T0 is observed for the laser structure. Reliable operation of the devices is shown in the 2300 h life-test of fibre coupled devices at a CW power of >1 W output from 100 μm diameter fibres
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; semiconductor device reliability; semiconductor lasers; 2300 hr; 6 W; 915 nm; InGaAs-AlGaAs; broad area LD; continuous wave operation; high power laser diodes; internal losses; reliable CW operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970920
  • Filename
    612191
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1413387