Title :
Reliable high power InGaAs/AlGaAs (915 nm) laser diodes
Author :
He, Xiangning ; Mitchell, Cathryn ; SRINIVASAN, SUDARSHAN ; Patel, Rahul
Author_Institution :
Opto Power Corp., Tucson, AZ
fDate :
7/31/1997 12:00:00 AM
Abstract :
Reliable continuous wave (CW) operation of high power InGaAs/AlGaAs (915 nm) laser diodes is reported. 6 W CW output power from uncoated 100 μm wide facets is demonstrated for an AlGaAs-InGaAs (915 nm) broad area laser diode. Internal losses are measured to be as low as 0.72 cm-1. High T0 is observed for the laser structure. Reliable operation of the devices is shown in the 2300 h life-test of fibre coupled devices at a CW power of >1 W output from 100 μm diameter fibres
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; semiconductor device reliability; semiconductor lasers; 2300 hr; 6 W; 915 nm; InGaAs-AlGaAs; broad area LD; continuous wave operation; high power laser diodes; internal losses; reliable CW operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970920
