Title :
Enhancement of magnetoresistance characteristics in spin valve structures by two-step sputter deposition
Author :
Park, Chang-Min ; Shin, Kyung Ho
Author_Institution :
Thin Film Technol. Res., Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
7/1/1998 12:00:00 AM
Abstract :
Spin valve structures were prepared by two-step deposition procedures. Upper layers were deposited at a higher sputtering pressure, while lower layers were deposited at a lower pressure. The possibility of independent control of maximum magnetoresistance and interlayer coupling was found. By employing the procedure, for example, two samples with similar magnetoresistance but quite different coupling fields (CF) can be produced, One has MRmax=4.0%, CF=7.6 Oe and the other has MRmax=4.1%, CF=15.5 Oe. It is thought that the two-step-deposited samples combine reduced current shunting due to the high pressure growth and reduced ferromagnetic interlayer coupling due to the low pressure growth
Keywords :
cobalt alloys; copper; giant magnetoresistance; iron alloys; magnetic multilayers; manganese alloys; nickel alloys; sputter deposition; FeMn-NiFeCo-Cu-NiFeCo; coupling fields; current shunting; giant magnetoresistance; high pressure growth; interlayer coupling; low pressure growth; spin valve structures; sputtering pressure; two-step sputter deposition; Couplings; Magnetic anisotropy; Magnetic multilayers; Magnetoresistance; Magnetostatics; Magnetostriction; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Spin valves; Sputtering;
Journal_Title :
Magnetics, IEEE Transactions on
