DocumentCode :
1413585
Title :
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- 
Gate Dielectrics
Author :
Kanamura, Masahito ; Ohki, Toshihiro ; Kikkawa, Toshihide ; Imanishi, Kenji ; Imada, Tadahiro ; Yamada, Atsushi ; Hara, Naoki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Volume :
31
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
189
Lastpage :
191
Abstract :
This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (V th) are 800 mA/mm and +3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications.
Keywords :
III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; high-k dielectric thin films; wide band gap semiconductors; GaN MIS-HEMT; GaN-AlN-GaN; drain current; high-electron-mobility transistor; high-k gate dielectrics; n-GaN/i-AlN/n-GaN triple cap layer; recessed-gate structure; threshold voltage; ALD; GaN; MIS high-electron-mobility transistor (MIS-HEMT); enhancement mode;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2039026
Filename :
5409667
Link To Document :
