DocumentCode
1413585
Title
Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- 
Gate Dielectrics
Author
Kanamura, Masahito ; Ohki, Toshihiro ; Kikkawa, Toshihide ; Imanishi, Kenji ; Imada, Tadahiro ; Yamada, Atsushi ; Hara, Naoki
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
Volume
31
Issue
3
fYear
2010
fDate
3/1/2010 12:00:00 AM
Firstpage
189
Lastpage
191
Abstract
This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage (V th) are 800 mA/mm and +3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications.
Keywords
III-V semiconductors; MIS devices; aluminium compounds; gallium compounds; high electron mobility transistors; high-k dielectric thin films; wide band gap semiconductors; GaN MIS-HEMT; GaN-AlN-GaN; drain current; high-electron-mobility transistor; high-k gate dielectrics; n-GaN/i-AlN/n-GaN triple cap layer; recessed-gate structure; threshold voltage; ALD; GaN; MIS high-electron-mobility transistor (MIS-HEMT); enhancement mode;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2039026
Filename
5409667
Link To Document