DocumentCode :
1413592
Title :
High-Performance a-IGZO TFT With 
Gate Dielectric Fabricated at Room Temperature
Author :
Lee, Jae Sang ; Chang, Seongpil ; Koo, Sang-Mo ; Lee, Sang Yeol
Author_Institution :
Center for Energy Mater. Res., Korea Inst. of Sci. & Technol., Seoul, South Korea
Volume :
31
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
225
Lastpage :
227
Abstract :
We have investigated the high-performance oxide thin-film transistor (TFT) with an amorphous indium gallium zinc oxide (a-IGZO) channel and ZrO2 gate dielectrics. The a-IGZO TFT is fully fabricated at room temperature without any thermal treatments. ZrO2 is one of the most promising high-k materials. The a-IGZO TFT (channel W/L = 240/30 ??m) with ZrO2 shows high performance such as high on current of 2.11 mA and high field effect mobility of 28 cm2/(V??s) at the gate voltage 10 V. The threshold voltage and the subthreshold swing are 3.2 V and 0.56 V/decade, respectively. Note that the high-performance a-IGZO TFT is higher than ever shown in previous researches.
Keywords :
amorphous semiconductors; carrier mobility; dielectric materials; heat treatment; indium compounds; thin film transistors; ZrO2; a-IGZO TFT; amorphous indium gallium zinc oxide channel; current 2.11 mA; gate dielectrics; gate voltage; high field effect mobility; high-k materials; high-performance oxide thin-film transistor; subthreshold swing; thermal treatments; threshold voltage; voltage 10 V; voltage 3.2 V; $ hbox{ZrO}_{2}$ on current;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2038806
Filename :
5409668
Link To Document :
