Compact Model for Organic Thin-Film Transistor

Author

Li, Ling ; Marien, Hagen ; Genoe, Jan ; Steyaert, Michiel ; Heremans, Paul

Author_Institution

Polymer & Mol. Electron. Group, IMEC, Leuven, Belgium

Volume

31

Issue

3

fYear

2010

fDate

3/1/2010 12:00:00 AM

Firstpage

210

Lastpage

212

Abstract

In this letter, a compact model for the dc current and capacitance of organic thin-film transistors is proposed. This model is based on the variable-range hopping-transport theory, and the double-exponential density-of-state function is assumed. The presented model can accurately describe the current from subthreshold regime to linear and saturation regime via a single unified formulation. Good agreement between the theoretical calculation and measurements of pentacene field-effect transistor is found. The application of this compact model on circuit simulation is also presented.

Keywords

DC machines; capacitance; circuit simulation; hopping conduction; organic field effect transistors; organic semiconductors; thin film transistors; capacitance; circuit simulation; compact model; dc current; double-exponential density-of-state function; linear regime; organic thin-film transistor; pentacene field-effect transistor; saturation regime; subthreshold regime; variable-range hopping-transport theory; Compact model; Gaussian density of states (DOS); hopping transport; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2039744

Filename

5409670