Two Multiport De-Embedding Methods for Accurate On-Wafer Characterization of 60-GHz Differential Amplifiers

Author

Tiemeijer, Luuk F. ; Pijper, Ralf M T ; Van der Heijden, Edwin

Author_Institution

NXP-TSMC Res. Centre, Eindhoven, Netherlands

Volume

59

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

763

Lastpage

771

Abstract

Two algorithms for distributed open-short (OS) and open-short-load de-embedding of multiport on-wafer S -parameter measurements are presented, and used for the characterization of four-port differential amplifiers operating in the 60-GHz band. For both methods, comparison to industry standard OS de-embedding shows that anomalies in extracted test-structure parasitics are now avoided, which in particular improves the characterization of the differential input and output impedances.

Keywords

CMOS analogue integrated circuits; S-parameters; differential amplifiers; field effect MIMIC; integrated circuit measurement; millimetre wave amplifiers; multiport networks; CMOS integrated circuit; distributed open-short de-embedding; four-port differential amplifier; frequency 60 GHz; multiport de-embedding method; multiport on-wafer S-parameter measurement; on-wafer differential amplifier characterization; open short load de-embedding; 45-nm node CMOS; Calibration; integrated circuits; multiport open-short-load (OSL) de-embedding; on-wafer microwave measurements;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2095879

Filename

5676221