Title :
Analytical expressions for subthreshold charges and currents in thin-film SOI MOSFETs
Author :
Mallikarjun, C. ; Bhat, K.N.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India
Abstract :
Analytical expressions for the front and back channel charges and currents in thin-film SOI MOSFETs operating in the subthreshold region are presented, based on a charge sheet model. The analysis includes the charge coupling between the front and back gates and the effect of interface states.
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; thin film transistors; Si; Si-SiO 2; analytical expressions; back channel charges; charge coupling; charge sheet model; effect of interface states; front channel charges; modelling; subthreshold charges; subthreshold currents; subthreshold operation; subthreshold region; thin-film SOI MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910273
