DocumentCode :
1413743
Title :
Magnetic changes in GMR heads caused by electrostatic discharge
Author :
Wallash, A. ; Kim, Young K.
Author_Institution :
Quantum Corp., Milpitas, CA, USA
Volume :
34
Issue :
4
fYear :
1998
fDate :
7/1/1998 12:00:00 AM
Firstpage :
1519
Lastpage :
1521
Abstract :
The effects of current transients on the magnetic response of GMR sensors is studied. It is shown that GMR sensors with an FeMn exchange layer exhibit large magnetic changes after a single ESD current transient. The energy which results in magnetic failure is only 0.9 nJ, which is much less than the 6 nJ which causes physical melting damage to the GMR sensor. These serious magnetic changes are explained in terms of resetting of the FeMn exchange layer direction due to the elevated temperature and internal magnetic field during the current transient. It is concluded that ESD stress testing of GMR sensors has revealed a new and important magnetic failure mechanism in GMR sensors
Keywords :
giant magnetoresistance; magnetic heads; magnetic sensors; magnetoresistive devices; transients; ESD stress testing; FeMn exchange layer; GMR sensors; Ta-NiFe-Co-Cu-Co-NiFe-FeMn-Ta; current transients; electrostatic discharge; giant magnetoresistive heads; internal magnetic field; magnetic failure; melting damage; Biological system modeling; Electrostatic discharge; Giant magnetoresistance; Immune system; Magnetic anisotropy; Magnetic fields; Magnetic heads; Magnetic sensors; Perpendicular magnetic anisotropy; Testing;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.706602
Filename :
706602
Link To Document :
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