Title :
Development of Embedded STT-MRAM for Mobile System-on-Chips
Author :
Lee, Kangho ; Kang, Seung H.
Author_Institution :
Adv. Technol., Qualcomm Incoporated, San Diego, CA, USA
Abstract :
Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) has been considered a promising technology for future mobile system-on-chip memories due to negligible static leakage power, high-speed read/write operations, and unlimited read/write endurance. In this paper, we address key challenges and recent advances for enabling embedded STT-MRAM on a deeply scaled CMOS logic platform.
Keywords :
CMOS memory circuits; MRAM devices; magnetic tunnelling; system-on-chip; deeply scaled CMOS logic platform; embedded STT-MRAM; high-speed read-write operations; mobile system-on-chip memories; mobile system-on-chips; spin-transfer-torque magnetoresistive random access memory; static leakage power; unlimited read-write endurance; Anisotropic magnetoresistance; Magnetic tunneling; Random access memory; Switches; System-on-a-chip; Temperature; Temperature measurement; CMOS integration; MTJ model; magnetic tunnel junctions; switching current; thermal stability;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2075920
