Improved Vertical p-Type Radio Frequency Metal-Base Transistors

Author

Silva, Wilson Jose da ; Yusoff, Abd Rashid bin Mohd ; Song, Ying ; Holz, Eikner ; Schulz, Dietmar ; Shuib, Saiful Anuar

Author_Institution

Univ. Tecnol. Fed. do Parana, Curitiba, Brazil

Volume

33

Issue

2

fYear

2012

Firstpage

263

Lastpage

265

Abstract

This letter reports radio frequency (RF) transistors using a high-resistivity p-type float zone silicon wafer. A high-density uniform organic semiconducting single layer is deposited using thermal evaporation technique, and RF transistors with a base layer of about 60 nm are fabricated. We report on a transistor exhibiting a cutoff frequency (f_T) of 630 kHz. In addition to the cutoff frequency, other important figures of merit for the RF transistor are also presented, including the common-emitter current gain and on/off ratio.

Keywords

bipolar transistors; evaporation; organic semiconductors; RF transistor; common-emitter current gain; cutoff frequency; frequency 630 kHz; high-density uniform organic semiconducting single layer; on-off current ratio; p-type float zone silicon wafer; thermal evaporation; vertical p-type radio frequency metal-base transistor; Current measurement; Cutoff frequency; Gain; Performance evaluation; Radio frequency; Silicon; Transistors; Cutoff frequency; metal-base transistor (MBT); radio frequency (RF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2177238

Filename

6122048