Continuous wave operation of 1.26 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

Author

Sato, S. ; Nishiyama, N. ; Miyamoto, T. ; Takahashi, T. ; Jikutani, N. ; Arai, M. ; Matsutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

Res. & Dev. Center, Ricoh Co. Ltd., Yokohama, Japan

Volume

36

Issue

24

fYear

2000

fDate

11/23/2000 12:00:00 AM

Firstpage

2018

Lastpage

2019

Abstract

Electrically pumped near 1.3 μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold current and voltage under continuous wave operation of a 10×10 μm² oxide aperture device were 7.6 mA and 2.8 V, respectively. The output power exceeded 0.1 mW and the slope efficiency was ~0.1 W/A

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; surface emitting lasers; 0.1 mW; 1.26 mum; 1.3 mum; 2.8 V; 7.6 mA; GaInNAs-GaAs; GaInNAs/GaAs; GaInNAs/GaAs vertical-cavity surface-emitting lasers; continuous wave operation; electrically pumped lasers; metalorganic chemical vapour deposition; output power; oxide aperture device; slope efficiency; threshold current; vertical-cavity surface-emitting lasers; voltage;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001430

Filename

888294