Dramatic reduction of sidegating in MODFETs

Author

Lin, Barry J. F. ; Mars, D.E. ; Low, Thomas S.

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA

Volume

35

Issue

12

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

2451

Abstract

The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied. It was found that the sidegating is independent of the implantation type but depends on the type of buffer layer. MODFETs fabricated with a low-temperature buffer layer exhibited excellent sidegating characteristics and maintained less than 0.2% reduction in the MODFET channel current up to a sidegating voltage of -70 V at a distance of 3 μm

Keywords

high electron mobility transistors; ion implantation; molecular beam epitaxial growth; semiconductor technology; -70 V; 3 micron; HEMT; MODFET ICs; channel current; elimination of sidegating; implant-isolated MODFETs; ion-implant isolation; kinds of MBE buffer layer; low-temperature buffer layer; sidegating characteristics; sidegating voltage; Buffer layers; Etching; FETs; Gallium arsenide; HEMTs; Implants; Leakage current; MESFETs; MODFETs; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.8883

Filename

8883