10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure

Author

Nakata, T. ; Takeuchi, T. ; Watanabe, I. ; Makita, Kikuo ; Torikai, T.

Author_Institution

Photonic & Wireless Devices Res. Lab., NBC Corp., Ibaraki, Japan

Volume

36

Issue

24

fYear

2000

fDate

11/23/2000 12:00:00 AM

Firstpage

2033

Lastpage

2034

Abstract

The development of waveguide avalanche photodiodes with a very thin 0.1 μm multiplication layer for use in high-speed, high-sensitivity, low-voltage-operation receivers is presented. A η=76% a GB product of 180 GHz. And a breakdown voltage Vb of 15 V were obtained. The 10 Gbit/s bit error rate measurement showed a sensitivity of -28 dBm (BER 10^-9, PRBS 2²³-1), which is the highest sensitivity yet reported for APD receivers

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; optical waveguides; sensitivity; 0.1 mum; 10 Gbit/s; 15 V; Gbit/s bit error rate measurement; Gbit/s high sensitivity low-voltage-operation avalanche photodiodes; InAlAs; InAlAs multiplication layer; InAlAs-InGaAs; breakdown voltage; high-sensitivity; high-speed; highest sensitivity; low-voltage-operation receivers; sensitivity; waveguide avalanche photodiode; waveguide structure;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001421

Filename

888305