DocumentCode
1414431
Title
7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates
Author
Simin, G. ; Hu, X. ; Ilinskaya, N. ; Kumar, A. ; Koudymov, A. ; Zhang, J. ; Khan, M.Asif ; Gaska, R. ; Shur, M.S.
Author_Institution
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Volume
36
Issue
24
fYear
2000
fDate
11/23/2000 12:00:00 AM
Firstpage
2043
Lastpage
2044
Abstract
A fast high-power solid-state switch based on a novel large periphery multigate AlGaNiGaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1 mm periphery and 10 μm gate-drain spacing, 7.5 kW/mm2 of switched power with on-state resistance of 75 mW×mm2 is obtained. The pulse response of the MOSHFET switch exhibited a rise-time <5 ns in pulsemode operation
Keywords
III-V semiconductors; MOSFET; aluminium compounds; field effect transistor switches; gallium compounds; power semiconductor switches; wide band gap semiconductors; 1 mm; 10 mum; 5 ns; 7.5 kW/mm2 current switch; AlGaN-GaN; AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors; MOSFET; MOSHFET; SiC; SiC substrates; pulse response;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001401
Filename
888312
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