• DocumentCode
    1414439
  • Title

    Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices

  • Author

    Pal, S. ; Ray, S.K. ; Lahiri, S. ; Bose, D.N.

  • Author_Institution
    Dept. of Phys. & Meteorol., Adv. Technol. Centre, Kharagpur, India
  • Volume
    36
  • Issue
    24
  • fYear
    2000
  • fDate
    11/23/2000 12:00:00 AM
  • Firstpage
    2044
  • Lastpage
    2046
  • Abstract
    Dielectric films from gadolinium gallium garnet single crystal were deposited by electron-beam evaporation on strained Si1-xGex/Si layers at 300 K to form high-k metal-insulator-semiconductor (MIS) structures. The p-Si0.74Ge0.20Ga2O3(Gd2 O3) interface properties were studied through C-V and G-V measurements of the MIS capacitors. Which showed encouraging electrical characteristics with oxide k=12.3 and minimum interface state density Dit of 4.8×1011 cm 2 eV -1
  • Keywords
    Ge-Si alloys; MOSFET; gadolinium compounds; gallium compounds; insulating thin films; interface states; interface structure; semiconductor-insulator boundaries; Ga2O3; Gd2O3; SiGe; SiGe MOSFET devices; electrical characteristics; high-k gate dielectric; interface state density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20001410
  • Filename
    888313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1414439