Title :
Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices
Author :
Pal, S. ; Ray, S.K. ; Lahiri, S. ; Bose, D.N.
Author_Institution :
Dept. of Phys. & Meteorol., Adv. Technol. Centre, Kharagpur, India
fDate :
11/23/2000 12:00:00 AM
Abstract :
Dielectric films from gadolinium gallium garnet single crystal were deposited by electron-beam evaporation on strained Si1-xGex/Si layers at 300 K to form high-k metal-insulator-semiconductor (MIS) structures. The p-Si0.74Ge0.20Ga2O3(Gd2 O3) interface properties were studied through C-V and G-V measurements of the MIS capacitors. Which showed encouraging electrical characteristics with oxide k=12.3 and minimum interface state density Dit of 4.8×1011 cm 2 eV -1
Keywords :
Ge-Si alloys; MOSFET; gadolinium compounds; gallium compounds; insulating thin films; interface states; interface structure; semiconductor-insulator boundaries; Ga2O3; Gd2O3; SiGe; SiGe MOSFET devices; electrical characteristics; high-k gate dielectric; interface state density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001410
