Title :
Modelling of direct tunnelling for thin SiO2 film on n-type Si(100) by Wentzel, Kramers, Brillouin method
Author :
Matsuo, N. ; Takami, Y. ; Kitagawa, Y. ; Miyoshi, T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Yamaguchi Univ., Ube, Japan
fDate :
11/23/2000 12:00:00 AM
Abstract :
The modelling of direct tunnelling (DT) through thin SiO2 films on n-type Si(100) using the WKB method is discussed. The emission of the electron from the quantised energy level at the SiO2/Si interface and the accumulation of the electron at the interface are assumed. By calculating the DT currents using this model, the reproducibility of the I-V characteristics is examined
Keywords :
WKB calculations; elemental semiconductors; insulating thin films; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; I-V characteristics; Si; SiO2; WKB method; direct tunnelling; n-type Si(100); quantised energy level; reproducibility; thin SiO2 film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001403
