DocumentCode
1414596
Title
Fast turnoff in optical switching of low-finesse GaAs Etalons operating in reflection
Author
Sahlen, O. ; Landgren, G. ; Rask, M.
Author_Institution
Dept. of Phys. II, R. Inst. of Technol., Stockholm
Volume
24
Issue
7
fYear
1988
fDate
3/31/1988 12:00:00 AM
Firstpage
373
Lastpage
374
Abstract
Subnanosecond switch-off times have been found in nonlinear GaAs Fabry-Perot etalons operating in reflection. Both pump and probe beams had photon energies exceeding the bandgap energy in GaAs. A laser diode was used as pump source
Keywords
III-V semiconductors; gallium arsenide; light interferometers; optical bistability; optical modulation; GaAs; fast switch off; laser diode pump; low-finesse GaAs Etalons; nonlinear GaAs Fabry-Perot etalons; optical switching; probe energy above bandgap; pump energy above bandgap; subnanosecond turnoff times;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5677
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