Title :
Fast turnoff in optical switching of low-finesse GaAs Etalons operating in reflection
Author :
Sahlen, O. ; Landgren, G. ; Rask, M.
Author_Institution :
Dept. of Phys. II, R. Inst. of Technol., Stockholm
fDate :
3/31/1988 12:00:00 AM
Abstract :
Subnanosecond switch-off times have been found in nonlinear GaAs Fabry-Perot etalons operating in reflection. Both pump and probe beams had photon energies exceeding the bandgap energy in GaAs. A laser diode was used as pump source
Keywords :
III-V semiconductors; gallium arsenide; light interferometers; optical bistability; optical modulation; GaAs; fast switch off; laser diode pump; low-finesse GaAs Etalons; nonlinear GaAs Fabry-Perot etalons; optical switching; probe energy above bandgap; pump energy above bandgap; subnanosecond turnoff times;
Journal_Title :
Electronics Letters
