Title :
90 GHz basedband lumped amplifier
Author :
Tsai, H.S. ; Kopf, R. ; Melendes, R. ; Melendes, M. ; Tate, A. ; Ryan, R. ; Hamm, R. ; Chen, Y.K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
fDate :
10/26/2000 12:00:00 AM
Abstract :
A broadband amplifier using InP-InGaAs single heterojunction bipolar transistors (HBTs) is presented. This modified Darlington amplifier exhibits a low-frequency gain of 6.2 dB with -3 dB bandwidth of 90 GHz. This wide bandwidth performance is compatible, or superior to, other lumped or distributed amplifiers based on HEMT and HBT technologies reported in the literature
Keywords :
III-V semiconductors; bipolar MIMIC; bipolar analogue integrated circuits; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; wideband amplifiers; 6.2 dB; 90 GHz; EHF; InP-InGaAs; InP-InGaAs HBT; MM-wave HBT technology; basedband lumped amplifier; broadband amplifier; modified Darlington feedback amplifier; single heterojunction bipolar transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000850
