Title :
Long wavelength InGaAs-InGaAlAs-InP diode lasers grown by solid-source molecular-beam epitaxy
Author :
Kuang, G.K. ; Böhm, G. ; Graf, N. ; Grau, M. ; Rösel, G. ; Meyer, R. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. of Munich, Germany
fDate :
10/26/2000 12:00:00 AM
Abstract :
The authors have fabricated InGaAs-InGaAlAs-InP strained quantum well lasers with wavelengths as long as 2208 nm using solid-source molecular-beam epitaxy. A continuous-wave threshold current density of 370 A/cm2 at 20°C and characteristic temperature of 53 K have been achieved
Keywords :
Debye temperature; III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 20 C; 2208 nm; 53 K; InGaAs-InGaAlAs-InP; InGaAs-lnGaAlAs-lnP diode lasers; characteristic temperature; continuous-wave threshold current density; diode lasers; fabrication; long wavelength diode lasers; solid-source molecular-beam epitaxy; strained quantum well lase; strained quantum well lasers; threshold current density; wavelengths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001328
