DocumentCode :
1414753
Title :
Evaluation on Protective Single Event Burnout Test Method for Power DMOSFETs
Author :
Liu, Sandra ; Marec, Ronan ; Sherman, Phillip ; Titus, Jeffrey L. ; Bezerra, Francoise ; Ferlet-Cavois, Véronique ; Marin, Marc ; Sukhaseum, Nicolas ; Widmer, Fabien ; Muschitiello, Michele ; Gouyet, Lionel ; Ecoffet, Robert ; Zafrani, Max
Author_Institution :
International Rectifier Corp., El Segundo, CA, USA
Volume :
59
Issue :
4
fYear :
2012
Firstpage :
1125
Lastpage :
1129
Abstract :
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and considerations in calculating SEB cross-section are discussed.
Keywords :
Power MOSFET; Resistors; Silver; Threshold voltage; Transient analysis; Xenon; Non-destructive; power MOSFET; single event burnout; test method;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2177863
Filename :
6122472
Link To Document :
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