To suppress dark current of high temperature /spl beta/-SiC/Si optoelectronic devices with porous silicon substrate

The suppression of high temperature dark current in a /spl beta/-SiC/Si optoelectronic device with a porous substrate has been studied. A pin structure was used to demonstrate the applicability. Experimental results show a 12-fold improvement in optical gain at 200/spl deg/C operating temperature for the sample prepared on a porous silicon substrate compared to the sample prepared on a Si substrate. The improvement is attributed to the suppression of dark current by the high resistivity and flexibility of the porous substrate.