InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications

Author

Yu, Kuo-Hui ; Lin, Kun-Wei ; Cheng, Chin-Chuan ; Lin, Kuan-Po ; Yen, Chih-Hung ; Wu, Cheng-Zu ; Liu, Wen-Chau

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

36

Issue

22

fYear

2000

fDate

10/26/2000 12:00:00 AM

Firstpage

1886

Lastpage

1888

Abstract

A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n⁺-GaAs/p⁺-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performance over a wider temperature operation range of 30-210°C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-temperature electronics; indium compounds; junction gate field effect transistors; leakage currents; power field effect transistors; semiconductor device breakdown; 30 to 210 C; GaAs/InGaAs double channel; HFET; InGaP-GaAs; InGaP/GaAs camel-like field-effect transistor; carrier confinement; gate barrier height; high-breakdown; high-breakdown characteristics; high-power; high-temperature applications; low-leakage; n⁺-GaAs/p⁺-InGaP/n-GaAs camel-like gate;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20001232

Filename

888453