Title :
InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature applications
Author :
Yu, Kuo-Hui ; Lin, Kun-Wei ; Cheng, Chin-Chuan ; Lin, Kuan-Po ; Yen, Chih-Hung ; Wu, Cheng-Zu ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
10/26/2000 12:00:00 AM
Abstract :
A novel InGaP/GaAs camel-like field-effect transistor (HFET) has been fabricated successfully and demonstrated. Because of the use of an n+-GaAs/p+-InGaP/n-GaAs camel-like gate and GaAs/InGaAs double channel, the gate barrier height and carrier confinement are improved. Therefore, low-leakage and high-breakdown characteristics are obtained. Experimentally, this device provides high-breakdown characteristics and good device performance over a wider temperature operation range of 30-210°C. Therefore, the studied InGaP/GaAs structure is suitable for high-power and high-temperature applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high-temperature electronics; indium compounds; junction gate field effect transistors; leakage currents; power field effect transistors; semiconductor device breakdown; 30 to 210 C; GaAs/InGaAs double channel; HFET; InGaP-GaAs; InGaP/GaAs camel-like field-effect transistor; carrier confinement; gate barrier height; high-breakdown; high-breakdown characteristics; high-power; high-temperature applications; low-leakage; n+-GaAs/p+-InGaP/n-GaAs camel-like gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001232
