Title :
Complementation SCR for RF IC ESD protection
Author :
Dong, Shuai ; Li, Meng ; Guo, Wenyong ; Han, Yi ; Huang, Dijiang ; Song, Bo
Author_Institution :
Dept. of ISEE, Zhejiang Univ., Hangzhou, China
Abstract :
Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 ??m RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit layout; radiofrequency integrated circuits; rectifiers; silicon; FOM; RF CMOS process; RF IC ESD protection; active area capacitance; division layout; edge capacitance; island-block complementation silicon controlled rectifiers; island-strip complementation silicon controlled rectifiers; novel layouts; size 0.18 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.2567
