DocumentCode :
1415035
Title :
Picosecond shock-wave generation on a GaAs nonlinear transmission line
Author :
Madden, C.J. ; Rodwell, Mark J. W. ; Marsland, R.A. ; Bloom, D.M. ; Pao, Y.C.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA
Volume :
35
Issue :
12
fYear :
1988
fDate :
12/1/1988 12:00:00 AM
Firstpage :
2452
Abstract :
A 3.5-ps falltime shock-wave signal has been generated on a nonlinear transmission line (NLTL). In this circuit a high-impedance transmission line is periodically loaded by Schottky varactor diodes, producing a synthetic transmission line with a voltage-dependent propagation velocity. As a negative-going input voltage transition propagates along the line, the falltime first decreases linearly with distance. As it decreases, dispersion arising from the Bragg periodic-line cutoff frequency and the varactor cutoff frequency competes with the compression arising from the voltage-dependent propagation velocity. A final limited falltime is reached at which the falltime compression per line section equals the falltime broadening per section, so that the resulting shockwave propagates unchanged. A full-scale NLTL design had 50 fF-diodes spaced 160 μm apart. In a half-scale design, 25-fF diodes were spaced by 80 μm. Nonlinear circuit simulations using SPICE indicate that the full-scale NLTL has a limiting falltime of 4.7 ps, while the half-scale line will compress to 2.7-ps falltime. A mixed design combined the full- and half-scale structure to utilize the lower minimum falltime of the half-scaled line after reaching the minimum falltime of the lower loss full-scale structure
Keywords :
III-V semiconductors; Schottky-barrier diodes; delay lines; digital simulation; distributed parameter networks; gallium arsenide; nonlinear network analysis; pulse generators; pulse shaping circuits; transmission lines; varactors; 160 micron; 2.7 to 4.7 ps; 25 fF; 50 fF; 80 micron; Bragg periodic-line cutoff frequency; GaAs; GaAs nonlinear transmission line; NLTL; circuit simulations using SPICE; combined full scale and half scale line; falltime compression; full-scale NLTL design; half-scale design; high-impedance transmission line; limiting falltime; mixed design; negative-going input voltage transition; periodically loaded by Schottky varactor diodes; picosecond shock-wave generation; pulse shaping networks; semiconductors; synthetic transmission line; varactor cutoff frequency competes; voltage-dependent propagation velocity; Circuit simulation; Cutoff frequency; Distributed parameter circuits; Gallium arsenide; Nonlinear circuits; SPICE; Schottky diodes; Signal generators; Varactors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.8886
Filename :
8886
Link To Document :
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