• DocumentCode
    1415136
  • Title

    Monolithic integration of AlGaN/GaN HFET with MOS on silicon (111) substrates

  • Author

    Chyurlia, P.N. ; Semond, F. ; Lester, T. ; Bardwell, J.A. ; Rolfe, S. ; Tang, Hongying ; Tarr, N.G.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
  • Volume
    46
  • Issue
    3
  • fYear
    2010
  • Firstpage
    253
  • Lastpage
    254
  • Abstract
    AlGaN/GaN HFETs and silicon MOSFETs have been integrated monolithically on a silicon (111) substrate. A differential heteroepitaxy technique was used to grow AlGaN/GaN HFET layers on silicon (111) substrates while leaving protected areas of atomically smooth silicon in which MOSFETs are built.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor growth; substrates; wide band gap semiconductors; AlGaN-GaN; HFET; MOS; differential heteroepitaxy technique; monolithic integration; silicon substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3167
  • Filename
    5410678
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415136