DocumentCode
1415142
Title
High-current-gain InGaAs/InP double-heterojunction bipolar transistors grown by metal organic vapor phase epitaxy
Author
Sugiura, O. ; Dentai, A.G. ; Joyner, C.H. ; Chandrasekhar, S. ; Campbell, Joe C.
Author_Institution
AT&T Bell Lab., Holmdel, NJ, USA
Volume
9
Issue
5
fYear
1988
fDate
5/1/1988 12:00:00 AM
Firstpage
253
Lastpage
255
Abstract
By inserting a thin n-InP layer between the p/sup +/-InGaAs base and the n-InP collector excellent transistor characteristics were obtained. The DE and small-signal current gains were 7000 and 11000, respectively, which are the highest values reported for transistors of this type. The transistors were also operated in a collector-up configuration with DE gains as large as 2500.<>
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; DE gains; InGaAs-InP; collector-up configuration; double-heterojunction bipolar transistors; metal organic vapor phase epitaxy; small-signal current gains; Bipolar transistors; DH-HEMTs; Electrons; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laboratories;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.707
Filename
707
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