DocumentCode
1415257
Title
6.8 GHz monolithic oscillator fabricated by 0.35 μm CMOS technologies
Author
Hsiao, C.C. ; Kuo, C.W. ; Chan, Y.-J.
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Volume
36
Issue
23
fYear
2000
fDate
11/9/2000 12:00:00 AM
Firstpage
1927
Lastpage
1928
Abstract
A 6.8 GHz CMOS monolithic oscillator with a 5.9 dBm output power has been demonstrated by 0.35 μm 1P4M CMOS technologies. The oscillator was designed based on a home-made modified BSIM3v3 large-signal model, where the high-frequency parasitics were included. In addition, on chip spiral inductors and MIM capacitors for the resonant circuit were characterised and used in this monolithic oscillator circuit
Keywords
CMOS analogue integrated circuits; MMIC oscillators; field effect MMIC; integrated circuit design; integrated circuit modelling; 0.35 micron; 1P4M CMOS technologies; 6.8 GHz; CMOS oscillator; MIM capacitors; high-frequency parasitics; modified BSIM3v3 large-signal model; monolithic oscillator circuit; onchip spiral inductors; resonant circuit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20001298
Filename
888660
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