Title :
6.8 GHz monolithic oscillator fabricated by 0.35 μm CMOS technologies
Author :
Hsiao, C.C. ; Kuo, C.W. ; Chan, Y.-J.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
11/9/2000 12:00:00 AM
Abstract :
A 6.8 GHz CMOS monolithic oscillator with a 5.9 dBm output power has been demonstrated by 0.35 μm 1P4M CMOS technologies. The oscillator was designed based on a home-made modified BSIM3v3 large-signal model, where the high-frequency parasitics were included. In addition, on chip spiral inductors and MIM capacitors for the resonant circuit were characterised and used in this monolithic oscillator circuit
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; field effect MMIC; integrated circuit design; integrated circuit modelling; 0.35 micron; 1P4M CMOS technologies; 6.8 GHz; CMOS oscillator; MIM capacitors; high-frequency parasitics; modified BSIM3v3 large-signal model; monolithic oscillator circuit; onchip spiral inductors; resonant circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001298
