DocumentCode :
1415373
Title :
Temperature dependency of x-cut LiNbO3 modulator DC drift
Author :
Nagata, H. ; Ishizuka, Y. ; Akizuki, K.
Author_Institution :
Optoelectron. Res. Div., Sumitomo Osaka Cement Co. Ltd., Chiba, Japan
Volume :
36
Issue :
23
fYear :
2000
fDate :
11/9/2000 12:00:00 AM
Firstpage :
1952
Lastpage :
1953
Abstract :
The activation energy (Ea) for DC drifts of x-cut LiNbO 3 (LN) modulators was obtained to be 1.4±0.2 eV based on statistical consideration of long-term biased aging test data at 100 and 120°C. Ea=1.4 eV means that 20 years of device life at 65°C- common system requirements can be promptly tested by 9 days aging at 120°C
Keywords :
ageing; lithium compounds; optical materials; optical modulation; optical testing; reliability; 1.4 eV; 100 C; 120 C; 20 y; 65 C; 9 d; DC drift; DC drifts; LiNbO3; LiNbO3 modulator; activation energy; aging; device life; long-term biased aging test data; statistical consideration; temperature dependency; x-cut materials;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20001355
Filename :
888677
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1415373
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