Title :
High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance
Author :
Chiu, H.C. ; Yang, S.C. ; Chan, Y.-J. ; Kuo, J.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
11/9/2000 12:00:00 AM
Abstract :
Al0.5In0.5P/In0.15Ga0.85 As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔEc (0.45eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm. A power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dSm for devices with a 1 mm wide gate
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; junction gate field effect transistors; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device breakdown; semiconductor device measurement; 1 mm; 17 dB; 2.4 GHz; 3.0 V; 59 percent; Al0.5In0.5P-InGaAs; Al0.5In0.5P/In0.15Ga0.85 As doped-channel HFETs; high Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs; high breakdown voltage; high linearity; input power; linear power gain; microwave power device; microwave power performance; output intercept point; output power density; power-added efficiency; third-order intermodulation; two-tone measurement; wide bandgap AlInP Schottky layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001371
