Title :
Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation
Author :
Neogi, A. ; Yoshida, H. ; Mozume, T. ; Georgiev, N. ; Akiyama, T. ; Wada, O.
Author_Institution :
Dept. of Phys., Duke Univ., Durham, NC, USA
fDate :
11/9/2000 12:00:00 AM
Abstract :
InP based InGaAs/AlAs/AlAsSb coupled double quantum well (CDQW) structures have been developed for intersubband transition (ISBT) in the near-infrared region for operation at communication wavelength. ISBT in CDQWs is influenced by the well and barrier width, and by the carrier population in the ground subband state governed by the doping level or the carrier temperature. ISBT at 1.3 and 1.55 μm can be achieved in 1.0 nm AlAs barrier coupled InGaAs/AlAsSb DQW with well widths 2.1 nm doped to 1018 cm-3, and 2.7 nm doped to 1018 cm-3, respectively
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; indium compounds; infrared spectra; interface states; semiconductor quantum wells; 1 nm; 1.3 mum; 1.55 mum; 2.1 nm; 2.7 nm; AlAs barrier coupled InGaAs/AlAsSb DQW; CDQWs; InGaAs-AlAs-AlAsSb; InGaAs/AlAsSb/InP coupled double quantum well structures; InP; InP based InGaAs/AlAs/AlAsSb coupled double quantum well; barrier width; carrier population; carrier temperature; communication wavelength operation; doping level; ground subband state; intersubband transition; near-infrared region; well width;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20001354
