Title :
1 Gbit/s zero-bias operation of 1.3 μm InGaAsP n-type modulation-doped strained multiquantum well lasers
Author :
Nakahara, K. ; Uomi, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
8/6/1998 12:00:00 AM
Abstract :
It is experimentally demonstrated that n-type modulation-doping reduces turn-on delay time at high temperatures in 1.3 μm InGaAsP strained multiquantum well lasers. As a result of the reduced turn-on delay time, a clear eye opening under 1 Gbit/s zero-bias modulation is achieved at high temperatures
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well lasers; 1 Gbit/s; 1.3 micron; InGaAsP; InGaAsP n-type modulation-doped strained multiquantum well laser; eye opening; high temperature; turn-on delay time; zero-bias modulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981096
