• DocumentCode
    1415616
  • Title

    1 Gbit/s zero-bias operation of 1.3 μm InGaAsP n-type modulation-doped strained multiquantum well lasers

  • Author

    Nakahara, K. ; Uomi, K. ; Taniwatari, T. ; Haga, T. ; Toyonaka, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    34
  • Issue
    16
  • fYear
    1998
  • fDate
    8/6/1998 12:00:00 AM
  • Firstpage
    1584
  • Lastpage
    1585
  • Abstract
    It is experimentally demonstrated that n-type modulation-doping reduces turn-on delay time at high temperatures in 1.3 μm InGaAsP strained multiquantum well lasers. As a result of the reduced turn-on delay time, a clear eye opening under 1 Gbit/s zero-bias modulation is achieved at high temperatures
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well lasers; 1 Gbit/s; 1.3 micron; InGaAsP; InGaAsP n-type modulation-doped strained multiquantum well laser; eye opening; high temperature; turn-on delay time; zero-bias modulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981096
  • Filename
    707153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415616