• DocumentCode
    1415635
  • Title

    Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots

  • Author

    Mukai, K. ; Nakata, Y. ; Shoji, H. ; Sugawara, M. ; Ohtsubo, K. ; Yokoyama, N. ; Ishikawa, H.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi, Japan
  • Volume
    34
  • Issue
    16
  • fYear
    1998
  • fDate
    8/6/1998 12:00:00 AM
  • Firstpage
    1588
  • Lastpage
    1590
  • Abstract
    Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm2, and an output power of 110 mW at room temperature
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 110 mW; 5.4 mA; InAs-GaAs; columnar-shaped quantum dots; current density; dot uniformity; emission efficiency; output power; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981075
  • Filename
    707156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415635