Title :
Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
Author :
Mukai, K. ; Nakata, Y. ; Shoji, H. ; Sugawara, M. ; Ohtsubo, K. ; Yokoyama, N. ; Ishikawa, H.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
8/6/1998 12:00:00 AM
Abstract :
Lasers with a new type of quantum dot achieve low threshold current and high output power. By supplying a small amount of InAs and GaAs alternately on GaAs substrates, dots with high uniformity and high emission efficiency were self-assembled. The lasers exhibited a threshold current of 5.4 mA, a current density of 160 A/cm2, and an output power of 110 mW at room temperature
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; 110 mW; 5.4 mA; InAs-GaAs; columnar-shaped quantum dots; current density; dot uniformity; emission efficiency; output power; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981075
