• DocumentCode
    1415708
  • Title

    2.7 μm LEDs for water vapour detection grown by MBE on InP

  • Author

    Krier, A. ; Chubb, D. ; Hopkinson, M.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    34
  • Issue
    16
  • fYear
    1998
  • fDate
    8/6/1998 12:00:00 AM
  • Firstpage
    1606
  • Lastpage
    1607
  • Abstract
    In0.87Ga0.13As/InAs0.70P0.30 double heterostructure light emitting diodes were grown on InP substrates using strain relaxed buffers by molecular beam epitaxy. The InAsP buffer incorporates a compositional step-back to reduce the threading dislocation density in the active region. Efficient electroluminescence at 2.7 μm was obtained at room temperature. A strong absorption is observed in the emission spectrum due to the presence of water vapour
  • Keywords
    III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; semiconductor epitaxial layers; spectrochemical analysis; water; 2.7 micron; H2O; In0.87Ga0.13As-InAs0.70P 0.30; In0.87Ga0.13As/InAs0.70P 0.30 DH LED; InP substrate; MBE growth; compositional step-back; electroluminescence; strain relaxed buffer layer; threading dislocation density; water vapour detection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981137
  • Filename
    707169
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415708