DocumentCode :
1415721
Title :
Infrared difference frequency generation with quasi-phase-matched GaAs
Author :
Lallier, E. ; Becouarn, L. ; Brevignon, M. ; Lehoux, J.
Author_Institution :
Central de Recherches, Thomson-CSF, Orsay, France
Volume :
34
Issue :
16
fYear :
1998
fDate :
8/6/1998 12:00:00 AM
Firstpage :
1609
Lastpage :
1611
Abstract :
The authors report infrared difference-frequency generation in a high transmission diffusion-bonded GaAs stack. Using an LiNbO3 optical parametric oscillator as the pump source, a conversion efficiency of 3.4×1.0-4, output energy of 2 μJ and 180 W peak power were obtained at 11.35 μm
Keywords :
III-V semiconductors; gallium arsenide; optical frequency conversion; 11.35 micron; 180 W; 2 muJ; GaAs; LiNbO3 optical parametric oscillator pump; conversion efficiency; diffusion-bonded GaAs stack; infrared difference frequency generation; quasi-phase-matching;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981143
Filename :
707172
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1415721
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