• DocumentCode
    1415735
  • Title

    Four noise parameter determination method for transistors based on the frequency dependence of the noise figure

  • Author

    Danelon, V. ; Corzat, P. ; Aniel, F. ; Vernet, G.

  • Author_Institution
    Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
  • Volume
    34
  • Issue
    16
  • fYear
    1998
  • fDate
    8/6/1998 12:00:00 AM
  • Firstpage
    1612
  • Lastpage
    1613
  • Abstract
    A new high frequency noise measurement method has been developed for transistors based on the frequency dependence of the noise figure. Results for a 1 μm gate length MESFET are presented
  • Keywords
    Schottky gate field effect transistors; electric noise measurement; semiconductor device noise; 1 micron; MESFET; frequency dependence; high frequency noise measurement; noise figure; noise parameter; transistor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981130
  • Filename
    707174
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415735