Title :
Four noise parameter determination method for transistors based on the frequency dependence of the noise figure
Author :
Danelon, V. ; Corzat, P. ; Aniel, F. ; Vernet, G.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
8/6/1998 12:00:00 AM
Abstract :
A new high frequency noise measurement method has been developed for transistors based on the frequency dependence of the noise figure. Results for a 1 μm gate length MESFET are presented
Keywords :
Schottky gate field effect transistors; electric noise measurement; semiconductor device noise; 1 micron; MESFET; frequency dependence; high frequency noise measurement; noise figure; noise parameter; transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981130
