Title :
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
Author :
Borgarino, M. ; Tartarin, J.G. ; Kuchenbecker, J. ; Parra, T. ; Lafontaine, H. ; Kovacic, T. ; Plana, R. ; Graffeuil, J.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
11/1/2000 12:00:00 AM
Abstract :
This work for the first time experimentally investigates the hot carrier effects on the RF characteristics (up to 30 GHz) of Si/SiGe heterojunction bipolar transistors (HBT´s). Reverse base-emitter voltage stresses were applied at room temperature on BiCMOS compatible, sub-micron transistors. The main observed degradation is a decrease of S 21. It was found that this degradation is minimized (maximized) when biasing at constant collector (base) current. These results may be valuable indications also for degradations induced by ionizing radiations
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; S-parameters; UHF bipolar transistors; elemental semiconductors; heterojunction bipolar transistors; hot carriers; microwave bipolar transistors; semiconductor device reliability; semiconductor materials; silicon; 30 GHz; BiCMOS compatible submicron transistors; RF characteristics; S21 parameter; Si-SiGe; Si/SiGe HBT; heterojunction bipolar transistors; hot carriers; ionizing radiation induced degradation; reverse base-emitter voltage stresses; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Hot carrier effects; Hot carriers; Radio frequency; Silicon germanium; Stress; Temperature; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
