Title :
High performance low noise charge preamplifier with DC coupling to particle silicon detectors in CMOS technology
Author_Institution :
LEPSI, Univ. Louis Pasteur, Strasbourg, France
fDate :
6/25/1998 12:00:00 AM
Abstract :
A low noise, low power CMOS charge preamplifier with DC coupling to particle silicon detectors has been designed. Simulation results show that the detector leakage current can be compensated up to 8 μA. The proposed charge amplifier has been simulated and implemented with a CMOS silicon-on-insulator process. A total RMS output noise voltage of 0.58 mV for a detector capacitance of 10 pF and a DC leakage current of 5 μA and a conversion gain of 2.86 mV/fC with 0.66 mW power consumption have been obtained
Keywords :
CMOS analogue integrated circuits; leakage currents; preamplifiers; silicon radiation detectors; silicon-on-insulator; 0.58 mV; 0.66 mW; 10 pF; 5 muA; CMOS technology; DC coupling; DC leakage current; RMS output noise voltage; charge preamplifier; conversion gain; detector capacitance; detector leakage current; particle silicon detectors; power consumption; silicon-on-insulator process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981698
