Microwave noise modeling of InP based MODFETs biased for low power consumption

This paper presents the fabrication, experimental characterization and modeling of 0.15 μm gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T/sub D/) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed. In fact, T/sub D/ can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.