Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz

Author

Arscott, S. ; David, T. ; Mélique, X. ; Mounaix, P. ; Vanbésien, O. ; Lippens, D.

Author_Institution

Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France

Volume

10

Issue

11

fYear

2000

fDate

11/1/2000 12:00:00 AM

Firstpage

472

Lastpage

474

Abstract

InP-based heterostructure barrier varactor (HBV) devices employing air-bridge technology have been fabricated on a quartz host substrate following a transfer-substrate technique. Electrical characterization demonstrates highly symmetrical I(V) and C(V) characteristics due to the preservation of the high quality MBE epitaxial layers during the transfer process. Small signal RF measurements have been performed up to 110 GHz and display a marked reduction in the values of parasitic resistance and capacitance, thus confirming the ability of the devices to operate in the upper-part of the MM-wave spectrum

Keywords

III-V semiconductors; indium compounds; millimetre wave diodes; molecular beam epitaxial growth; quartz; semiconductor technology; substrates; varactors; 110 GHz; EHF; InP; InP-based varactor diodes; MM-wave operation; air-bridge technology; electrical characterization; heterostructure barrier varactor diodes; high quality MBE epitaxial layers; quartz host substrate; symmetrical C-V characteristics; symmetrical I-V characteristics; transfer-substrate technique; Capacitance measurement; Displays; Electrical resistance measurement; Epitaxial layers; Molecular beam epitaxial growth; Performance evaluation; RF signals; Radio frequency; Substrates; Varactors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.888836

Filename

888836