A Ka band extended resonance power amplifier

Author

Martin, Adam L. ; Mortazawi, Amir

Author_Institution

M/A-COM, Roanoke, VA, USA

Volume

10

Issue

11

fYear

2000

Firstpage

475

Lastpage

477

Abstract

A Ka-band power amplifier based on an extended resonance power combining technique is presented. This technique enables the design of planar microstrip power amplifiers that are much more compact than those based on traditional quarter-wave hybrid designs. The extended resonance power combining amplifier presented here combines four GaAs MESFETs at 32.8 GHz using a planar structure that is more than 40% smaller than a quarter-wave hybrid power combining amplifier design, while the power-combining efficiency is 92%. The measured small-signal gain at 32.8 GHz is 4.6 dB, and at 1-dB compression the output power is 23.3 dBm with a power-added efficiency of 12.8%.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MIMIC; gallium arsenide; microstrip circuits; millimetre wave power amplifiers; power combiners; 12.8 percent; 32.8 GHz; 4.6 dB; 92 percent; GaAs; Ka band; MESFET; extended resonance power amplifier; output power; planar microstrip power amplifiers; power combining technique; power-combining efficiency; small-signal gain; Admittance; Circuit synthesis; Microwave FETs; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Power generation; Resonance; Shunt (electrical);

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.888837

Filename

888837