38/76 GHz PHEMT MMIC balanced frequency doublers in coplanar technology

Author

Campos-Roca, Y. ; Verweyen, L. ; Fernandez-Barciela, M. ; Bischof, W. ; Curras-Francos, M.C. ; Sanchez, E. ; Hulsmann, A. ; Schlechtweg, Michael

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

Volume

10

Issue

11

fYear

2000

Firstpage

484

Lastpage

486

Abstract

Two 38/76 GHz push-push frequency doublers have been realized in a 0.15 μm GaAs PHEMT technology. The circuits are based on different 180/spl deg/ power divider structures: a Lange coupler followed by a 90/spl deg/ transmission line, and a balun. The circuits achieve maximum conversion gains of -4 and -6 dB for 12 and 14 dBm input signals, respectively. The fundamental suppression is approximately 30 dBc in both cases. To our knowledge, these results represent the best performance reported to date for W-band balanced doublers.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; baluns; coplanar waveguide components; field effect MMIC; frequency multipliers; gallium arsenide; millimetre wave couplers; power dividers; 0.15 micron; 38 GHz; 76 GHz; GaAs; III-V semiconductors; Lange coupler; PHEMT MMIC; W-band; balanced frequency doublers; balun; conversion gains; coplanar technology; power divider structures; push-push frequency doublers; Coplanar transmission lines; Coupling circuits; Distributed parameter circuits; Frequency; Gallium arsenide; Impedance matching; MMICs; PHEMTs; Power dividers; Power transmission lines;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.888840

Filename

888840