DocumentCode :
1415867
Title :
HfSiO Bulk Trap Density Controls the Initial 
in nMOSFETs
Author :
Sahhaf, Sahar ; Degraeve, Robin ; Srividya, V. ; De Brabanter, Kris ; Schram, Tom ; Gilbert, M. ; Vandervorst, Wilfried ; Groeseneken, Guido
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
Volume :
12
Issue :
2
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
323
Lastpage :
334
Abstract :
The underlying physical mechanism of the Vth adjustment of nMOSFETs with HfSiO/TiN gate stack obtained by As and Ar implantation is investigated. It is experimentally proved that the trapped charge in the HfSiO bulk defects controls the initial Vth value in nMOSFETs. The reduction of the charged trap density in HfSiO by implant explains the tuned Vth values.
Keywords :
MOSFET; hafnium compounds; HfSiO; bulk defects; bulk trap density; charged trap density; nMOSFET; Argon; Dielectrics; Electron traps; High K dielectric materials; Implants; Logic gates; Metals; $V_{rm fb}$ $V_{rm th}$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2182997
Filename :
6123203
Link To Document :
