Manufacturing and materials properties of Ti/Cu/Electroless Ni/solder bump on Si

Author

Lin, Kwang-Lung ; Hsu, Kun-Tzu

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

23

Issue

4

fYear

2000

fDate

12/1/2000 12:00:00 AM

Firstpage

657

Lastpage

660

Abstract

This work attempted to fabricate the solder bump with the structure: Si/Ti/Cu/Electroless Ni/solder. The shear strength of the solder bump, with bump pad of 60 μm in diameter, is around 15 g/bump prior to and after reflow. The solder bumps fractured at the solder. Humidity test at 85% of relative humidity at 85°C and a high temperature treatment at 150°C for 1000 h tend to downgrade the shear strength of the solder portion of the bump, yet not the interface. Both treatments enhance the growth of intermetallic compound (IMC) formed between Ni and solder. The barrier effect of electroless nickel deposit was investigated

Keywords

adhesion; copper; diffusion barriers; electroless deposition; flip-chip devices; integrated circuit reliability; microassembling; nickel; reflow soldering; titanium; 1000 h; 150 degC; 60 micron; 85 degC; barrier effect; bump pad; flip chip; fracture; humidity test; intermetallic compound; reflow; shear strength; solder bump; Adhesives; Humidity; Intermetallic; Manufacturing; Material properties; Nickel; Scanning electron microscopy; Shearing; Temperature; Testing;

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/6144.888849

Filename

888849