Title :
Manufacturing and materials properties of Ti/Cu/Electroless Ni/solder bump on Si
Author :
Lin, Kwang-Lung ; Hsu, Kun-Tzu
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
12/1/2000 12:00:00 AM
Abstract :
This work attempted to fabricate the solder bump with the structure: Si/Ti/Cu/Electroless Ni/solder. The shear strength of the solder bump, with bump pad of 60 μm in diameter, is around 15 g/bump prior to and after reflow. The solder bumps fractured at the solder. Humidity test at 85% of relative humidity at 85°C and a high temperature treatment at 150°C for 1000 h tend to downgrade the shear strength of the solder portion of the bump, yet not the interface. Both treatments enhance the growth of intermetallic compound (IMC) formed between Ni and solder. The barrier effect of electroless nickel deposit was investigated
Keywords :
adhesion; copper; diffusion barriers; electroless deposition; flip-chip devices; integrated circuit reliability; microassembling; nickel; reflow soldering; titanium; 1000 h; 150 degC; 60 micron; 85 degC; barrier effect; bump pad; flip chip; fracture; humidity test; intermetallic compound; reflow; shear strength; solder bump; Adhesives; Humidity; Intermetallic; Manufacturing; Material properties; Nickel; Scanning electron microscopy; Shearing; Temperature; Testing;
Journal_Title :
Components and Packaging Technologies, IEEE Transactions on
DOI :
10.1109/6144.888849
